纳米SiO2／CeO2复合磨粒的制备及其抛光特性研究  

Preparation of Nano SiO_2/CeO_2 Composite Particles and Their Polishing Performance

作　　者：肖保其[1] 雷红[1] 

机构地区：[1]上海大学纳米中心

出　　处：《摩擦学学报》2008年第2期103-107,共5页Tribology

基　　金：国家自然科学基金资助项目(50575131);国家973计划资助项目(2003CB716201);上海市自然科学基金资助项目(07ZR14039);上海市教委第五期重点学科资助项目(J50102)

摘　　要：以尿素[CO(NH2)2]、(NH4)2Ce(NO3)6和SiO2为原料,采用均相沉淀法制备1种新型纳米SiO2/CeO2复合磨粒,通过X射线衍射仪、X射线光电子能谱仪、飞行时间二次离子质谱仪和扫描电子显微镜等分析手段对其结构进行表征,并将SiO2/CeO2复合磨粒配置成抛光液在数字光盘玻璃基片上进行化学机械抛光试验.结果表明:所制备的SiO2/CeO2复合磨粒的平均晶粒度为19.64 nm,粒度分布均匀;经过1 h抛光后,玻璃基片的平均表面粗糙度(Ra)由1.644 nm降至0.971 nm;抛光后玻璃基片表面变得光滑、平坦,表面微观起伏较小.A kind of novel nano SiO2/CeO2 composite particles were synthesized using CO（ NH2 ）2, （NH4）2Ce （NO3） 6 and SiO2 by homogenous precipitation, and they were characterized by XRD, XPS, TOF-SIMS and SEM. The average diameter of particles was 19.64 nm, and particle size distributed uniformly. The polishing performance of the SiO2/CeO2 composite abrasives on glass substrate were investigated using SPEEDFAM-16B-4M CMP equipment. The average roughness R, of the surface was reduced from 1. 644 nm to 0. 971 nm after one hour polishing. AFM showed that the polished glass substrate surface became smooth and micro-defects could hardly be observed.

关 键 词：化学机械抛光(CMP) 玻璃基片 复合磨粒 

分 类 号：TH117.3[机械工程—机械设计及理论]