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作 者:顾广瑞 金哲 Ito Toshimichi
机构地区:[1]Department of Physics,College of Science,Yanbian University [2]Division of Electrical,Electronic and Information Engineering,Graduate School of Engineering,Osaka University
出 处:《Chinese Physics B》2008年第4期1467-1471,共5页中国物理B(英文版)
摘 要:Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition (MPCVD) in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope (FESEM) and Raman spectroscopy. These nano^carbon films are possessed of good field emission (FE) characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim (F-N) model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current (SCLC) effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition (MPCVD) in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope (FESEM) and Raman spectroscopy. These nano^carbon films are possessed of good field emission (FE) characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim (F-N) model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current (SCLC) effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.
关 键 词:field emission carbon films nano-sheet microwave plasma chemical vapour deposition
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