两种IGCT三电平变频产品功率部分的比较  

Power Stage Comparison of Two IGCT 3 Level NPC Inverter

作　　者：楚子林[1] 徐道恒[1] 赵相宾[1] 许希[1] 伍丰林[1] 

机构地区：[1]天津电气传动设计研究所,天津300180

出　　处：《电气传动》2008年第4期8-11,共4页Electric Drive

摘　　要：目前在中压兆瓦级变频应用中IGCT器件比GTO和HVIGBT有更多的综合优势。在兆瓦级变频应用领域,基于IGCT器件的中压变频器产品已经越来越多地得到应用。两家国际知名电气公司ABB和SIEMENS都生产基于中点钳位三电平拓扑的中压变频系列产品。简单介绍了两家公司的电压型中压变频器产品,并试图通过对这两家公司的两种典型产品功率部分的简单比较,来说明两家公司相关产品功率部分的若干技术特点。The state of the art of high power switching device in medium voltage mega watt application is the Integrate Gate Commutated Thyristor, IGCT, which has more advantages over the GTO and HV - IGBT. More and more mega watt medium voltage converter products based on IGCT are bing used. Two famous com- panies, ABB and SIEMENS, have their own product series based on IGCT in 3 - level NPC topologies. This paper first briefly introduced the voltage source medium voltage converter products of the two companies and then try to explain the specialty via the comparison of the power stage of two typical converter by the two companies.

关 键 词：IGCT器件 中点钳位 三电平结构 水冷散热器 电压型变频器 

分 类 号：TP21[自动化与计算机技术—检测技术与自动化装置]