掺氧非晶硅的正电子寿命研究  

Positron Lifetime Studies on Oxygen-Doped Amorphous Silicon Films

作　　者：史志强[1] 刘克源[2] 王学恩 刘兴胜 杨子强 

机构地区：[1]陕西师范大学物理系,西安710062 [2]西北大学电子科学系,西安710069

出　　处：《Journal of Semiconductors》1997年第11期811-813,共3页半导体学报（英文版）

摘　　要：在室温下测量了掺氧非晶硅薄膜的正电子寿命谱．实验发现，随着掺氧量的增加，正电子寿命减小，对应的相对强度增加．据此，本文从电子密度、悬挂键和微空洞等方面讨论了氧掺杂对非晶硅薄膜微观结构的影响．Positron lifetime measurements have been performed in a-Si: [H. O] amorphous silicon films as a function of oxygen content at room temperature. It is f0und that the value of the intermediate-lived component τ2 tends to decrease, while the value of the relative intensity I2 tends to increase, with the increasing of oxygen content. The influences of oxygen atom on the electronic density, the dangling bonds and the microvoids in amorphous silicon films are discussed.

关 键 词：非晶硅 掺氧 正电子寿命 

分 类 号：TN304.12[电子电信—物理电子学]