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作 者:徐东[1] 戚震中 李依群 蔡炳初[1] 漆璇[2] 郭亮 江伯鸿[2]
机构地区:[1]上海交通大学信息存储中心,上海200030 [2]上海交通大学材料科学系,上海200030
出 处:《真空科学与技术》1997年第5期311-314,共4页Vacuum Science and Technology
摘 要:采用射频溅射法成功地制备了NiTi形状记忆合金薄膜。研究了不同成分靶材对膜最终成分的影响。电子探针和俄歇能谱仪测定结果表明,在Ni(50at%)/Ti(50at%)的靶材上添入适量的Ti,可以获得Ni/Ti为1:1的薄膜。经晶化处理后,其结构为B2,用电阻法和差热分析确定TAs,TAf,TMs和TMf点分别为22,44,30,60℃。观察到了形状记忆现象。The thin films of NiTi shape memory alloy have been successfully prepared by RF sputtering. The results of electron probe as well as Auger spectroscopy showed that addition of some Ti to the 50 at% Ni and 50 at% Ti target may results in a film with a stoichiometry of Ni/Ti= 1/1. The X-ray diffraction,electric resistance measurement and DSC were used to determine the structure and phase transformation behavior. The Austin trans formation point for the film is to determined to be TAs = 22℃ and TAf =44℃ respectively. The shape memory effect of the sample is shown was observed.
分 类 号:TG139.6[一般工业技术—材料科学与工程]
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