CMOS RFIC平面螺旋差分变压器参数化等效电路建模  

Scalable Equivalent Circuit Model of Planar Spiral Differential Transformers for CMOS RFIC's

作　　者：徐洁晶[1] 多新中[2] 汪辉[1] 杨立吾[1] 

机构地区：[1]上海交通大学微电子学院,上海200240 [2]中芯国际集成电路制造(上海)有限公司设计服务处RF小组,上海201203

出　　处：《微电子学》2008年第2期206-210,214,共6页Microelectronics

基　　金：国家自然科学基金资助项目(NSFC60606015);上海市浦江人才计划资助项目(05PJ14068);上海交通大学微电子学院科研基金资助项目

摘　　要：对现今常用的八边形CMOS RFIC平面螺旋差分变压器进行了参数化的2-π集总参数等效电路建模。所建模型包含随频率变化的各种损耗效应,各元件值均可根据工艺参数和器件几何尺寸以参数化的解析表达式得出。将电路仿真值与ADS Momentum器件仿真值进行对比,两者在DC^20 GHz谐振点前的频率范围内都得到了较好的拟合效果。在此基础上,对同样结构的巴仑也进行了建模和仿真。从仿真结果分别得出两者符合实际应用需要的频段。A scalable 2-n lumped-element equivalent circuit model of octagonal-shaped planar spiral differential transformers for CMOS RFIC＇s was presented Variable parasitics were considered in the model. All the elements can be calculated using scalable analytical expressions according to the process parameters and the device geometric dimensions. Circuit simulation results were compared with those of device simulation using ADS Momentum, which demonstrated that they were well-fitted in the frequency range from DC to 20 GHz before self-resonant frequency. Modeling and simulation of baluns with the same configurations were also performed on the basis of the previously＇ proposed model, and the frequency range that meets specifications for practical applications can be extracted respectively.

关 键 词：CMOS 射频集成电路 变压器 平面螺旋差分变压器 参数化等效电路模型 

分 类 号：TN432[电子电信—微电子学与固体电子学]