一种用于锂电池保护芯片的低功耗电压基准源  

A Low-Power Voltage Reference Source for Lithium Battery Protection ICs

作　　者：马绍宇[1] 韩雁[1] 洪慧[1] 周海峰[1] 

机构地区：[1]浙江大学微电子与光电子研究所,杭州310027

出　　处：《微电子学》2008年第2期255-257,261,共4页Microelectronics

摘　　要：介绍了一种应用于锂电池保护芯片的低功耗CMOS电压基准源。该电路采用耗尽型NMOS管作电流源器件，结合负反馈，实现了稳定的电压基准。这种新型电压基准电路适用于锂电池保护芯片，提供检测基准电压。采用这种基准电路的锂电池保护芯片已在0．6μm双层多晶硅单层金属的CMOS工艺下实现。测试结果表明，电源电压在2．5～5V范围内变化时，输出基准电压为1．2V，变化不超过5mV，最大工作电流小于1μA，体眠状态下电流小于50nA，完全符合锂电池保护电路对低功耗基准源的要求。A low-power CMOS voltage reference source for Li-ion battery protection ICs was presented. A depleted NMOS transistor, which was used as current source, and a negative feedback loop constitute a stable voltage reference. The novel voltage reference source was applied to a Li-ion battery protection IC to provide various detection voltages. A Li-ion battery protection chip was fabricated in 0. 6 /an double-poly single-metal CMOS process using this novel reference circuit. Test results show that the voltage reference has an output of 1.2 V at supply voltages ranging from 2. 5 V to 5 V, with a variation of only 5 mV. The proposed voltage reference consumes less than I ffA of current in operation mode, and no more than 50 nA in sleep mode, which meets the requirement of low power Lithium battery protection ICs.

关 键 词：电压基准源 锂电池保护芯片 耗尽型MOS晶体管 

分 类 号：TN432[电子电信—微电子学与固体电子学]