SPS工艺制备SiC_p/Si_3N_4复相陶瓷及其力学性能的研究  

FABRICATION OF SiC_P/Si_3N_4 CERAMIC BY SPARK PLASMA SINTERING TECHNI-QUE AND IT’S MECHANICAL PROPERTIES

作　　者：张勇[1] 何新波[1] 曲选辉[1] 赵珍[1] 孔祥磊[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《粉末冶金工业》2008年第2期1-5,共5页Powder Metallurgy Industry

基　　金：国家自然科学基金委员会资助(50404012)

摘　　要：使用Si3N4、SiC陶瓷微粉为原料,氧化铝(Al2O3)和氧化钇(Y2O3)为烧结助剂,通过放电等离子烧结(SPS)技术快速制备了SiC/Si3N4复相陶瓷,并研究了SiC的添加量、SPS的烧结温度、压力和保温时间等参数对烧结试样相对密度、力学性能及显微结构的影响。结果表明,SiC颗粒补强增韧Si3N4陶瓷的最佳添加量为15%,相对与单相Si3N4陶瓷,维氏硬度提高了6·6%,断裂韧性提高了5%,抗弯强度提高了24%,样品晶粒比较均匀,SiC颗粒诱发穿晶断裂和钉扎效应提高了基体的断裂韧性。SiC/Si3N4 ceramic was fabricated by Spark Plasma Sintering （SPS）technique with Y2O3 and Al2O3 as sintering additives. The effect of SiC content, sintering temperature, pressure and holding time on density of samples was studied. The results show that the optimum conditions are：SiC content is 15%, sintering temperature is 1450℃, pressure is 50 MPa and the holding time is 5min,and a relative density of 99.2% ,the Vickers hardness of 2012 HV, toughness of 8.64 MPa. m^1/2, bending strength of 644 MPa could be obtained for samples with uniform grain size. The SiC grain induced transcrystalline fracture and nail function increase fracture toughness.

关 键 词：碳化硅/氮化硅陶瓷 放电等离子烧结 相对密度 力学性能 

分 类 号：TQ174.75[化学工程—陶瓷工业]