丝网印刷三极CNT-FEA的研制  

Fabrication of Triode CNT-FEA Using Screen Print Process

作　　者：刘卫华[1] 朱长纯[1] 

机构地区：[1]西安交通大学电子与信息工程学院

出　　处：《液晶与显示》2008年第2期178-182,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金项目(No.60036010;No.60476037);国家"863"项目(No.2001AA313090)

摘　　要：制作三极型场发射阵列（FEA），传统上都依赖薄膜工艺及光刻技术。这在很大程度上限制了印刷型碳纳米管阴极的优势。通过改进全丝网印刷工艺，包括一项改进的栅极烧结，工艺和一项洁网技术，成功地制作出。32×32的三极型以碳纳米管为阴极的场发射阵列（CNT-FEA）。该三极型CNT-FEA具有显著的栅控特性。栅压在150～300V可以对阳极电流实现良好的控制。栅控电流放大系数超过180。Thin film process and photolithography is conventionally used in the fabrication of a triode type field-emission-array with carbon nanotube as cathode （CNT-FEA）. However, these processes are incompatible with the screen print process in fabrication of the CNT film. A full-screen-print process was developed in the fabrication of the triode type carbon nanotube FEA. An optimized sintering process and a technique of screen cleaning were adopted. A 32 × 32 CNT-FEA with a good gate controllable field emission characteristic was successfully prepared. The anode current was well modulated by a gate voltage between 150 V and 300 V. Amplification coefficient larger than 180 between the gate current and the anode current was achieved.

关 键 词：碳纳米管 场发射 丝网印刷 

分 类 号：TN383.1[电子电信—物理电子学]