Study on nitridation processes of β-Ga_2O_3 single crystal  

作　　者：李星 夏长泰 何肖丽 裴广庆 张俊刚 徐军 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences,Shanghai 201800 [2]Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031 [3]GE(China)Research and Development Center Company Limited Shanghai 201203

出　　处：《Chinese Optics Letters》2008年第4期282-285,共4页中国光学快报（英文版）

基　　金：the National Natural Science Foundation of China under Grant No.50672105;the Hundred Talents Program of Chinese Academy of Sciences.

摘　　要：Nitridated β-Ga2O3 （100） substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of β-Ga2O3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900 ℃, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.Nitridated β-Ga2O3 （100） substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of β-Ga2O3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900 ℃, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.

关 键 词：Epitaxial growth Gallium compounds Gallium nitride NITRIDATION Single crystals Surface roughness 

分 类 号：O734[理学—晶体学]