稀土铒的掺入对光晶体管性能的改善  

Improving Phototransistor's Performance By Doping Rare-Earth Erbium

作　　者：孙成城[1] 何淑芳[1] 江剑平[1] 黄小康 

机构地区：[1]清华大学电子工程系,北京100084

出　　处：《Journal of Semiconductors》1997年第10期796-800,共5页半导体学报（英文版）

基　　金：国家自然科学基金!(69486003)

摘　　要：使用稀土铒作为吸杂剂可以有效地减少背景载流子浓度达一个数量级以上，和传统工艺条件相比生长溶液的烘烤时间从60～70小时减至3～4小时，同时获得了高纯度的铟镓砷外延层和高质量的异质结．用于光晶体管使其光增益高达4000，和未使用铒吸杂剂相比增加近3倍．Using Erbium as getter in the growth of In0.53Ga0.47As/InP by LPE can rapidly and effectively reduce background impurity concentration over one order of magnitude,and decrease baking time of the growth melt from 60~70 hours to 3~4 hours, compared with the conventional procedure. High purity epitaxial layers and high quality heterojunction were obtained. The optical gain of the phototransistors with doping Er-getter is as high as 4000, 3 times more than that of the phototransistors without doping Er-getter.

关 键 词：光晶体管 铒 掺杂 

分 类 号：TN364.3[电子电信—物理电子学] TN305.3