微带巴仑双极PIN管电调衰减器分析与设计  

Analysis and Design of Microstrip Balun Bipolar PIN Diode Electronic-Controlled Attenuator

作　　者：孙晓玮[1] 姚中兴[1] 李华树[1] 

机构地区：[1]西安电子科技大学,西安710071

出　　处：《微波学报》1997年第1期73-76,82,共5页Journal of Microwaves

基　　金：中国工程物理研究院科学技术基金

摘　　要：本文分析了一种具有微带已仑结构的双极PIN管电调衰减器，该衰减器结构合理，衰减动态范围大，并可以实现双极衰减特性。文中给出了设计方法和实验结果。实验表明，该衰减器在2.10～2.30GHZ电调范围±5V内最大衰减可达35dB。A kind of the S-band bipolar attenuator with the microstrip balun is analysed in this paper. It has a reasonable construction, a very large dynamic range, and achieves the bipolar attenuating property. The design method and the experimental results are also given. The experiment shows that the maximum attenuation of this bipolar attenuator is about 35dB within 2. 10～2. 30GHz frequency band and control voltage from - 5 to +5V.

关 键 词：微带巴仑 PIN管 双极衰减器 衰减器 

分 类 号：TN715.02[电子电信—电路与系统]