三维Monte Carlo法模拟不同点阵类型的晶粒长大过程  

Three-dimensional Monte Carlo simulation of grain growth with different lattice types

作　　者：刘运腾[1] 关小军[1] 申孝民[1] 麻晓飞[1] 王丽君[1] 曾庆凯[1] 禹宝军[1] 

机构地区：[1]山东大学材料科学与工程学院,济南250061

出　　处：《中国有色金属学报》2008年第4期728-732,共5页The Chinese Journal of Nonferrous Metals

基　　金：山东省国际科技合作计划资助项目(2006);山东省自然科学基金资助项目(Y2007f06)

摘　　要：利用Monte Carlo方法模拟了300×300×300三维正常晶粒长大过程,研究密排六方点阵的应用可行性及其特点,比较不同点阵结构以及不同范围的近邻结点的能量计算对晶粒长大过程的影响。通过综合分析晶粒长大动力学和拓扑结构发现,密排六方的点阵结构以及考虑更大范围近邻结点的能量计算方式更适合正常晶粒长大过程的模拟。A 300×300×300 three-dimensional normal grain growth was simulated by using Monte Carlo method. Different lattice types and energy calculations considering different neighboring sites ranges were compared. It could be found that the triangular lattice and energy calculations considering a wide neighboring sites range are much more appropriate to simulate grain growth by comprehensive analyzing grain growth dynamics and topological microstructure.

关 键 词：晶粒长大 MONTE Carlo 三维模拟 点阵类型 

分 类 号：TG111.7[金属学及工艺—物理冶金] TP391.9[金属学及工艺—金属学]