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作 者:韦志仁[1] 李振军[1] 高平[1] 张利明[1] 董国义[1]
机构地区:[1]河北大学物理科学与技术学院,保定071002
出 处:《无机化学学报》2008年第4期653-656,共4页Chinese Journal of Inorganic Chemistry
基 金:国家自然科学基金(No50472037;50672020;50772027);河北省自然科学基金(NoE2007000197;E2006001008)资助
摘 要:氧化锌为直接带隙宽禁带半导体材料,由于其优良的光电性能,预计在未来光电信息领域有着巨大的应用前景,引起了广泛的研究兴趣。Micron-scale trumpet tubular ZnO crystals were synthesized by Chemical Vapor Transport (CVT) process. After the ZnO powder was deoxidized in the stove by H2 from NH3 decomposition at high temperature, the zinc vapor was transported by Ar to the high-temperature crystal growth region. The zinc vapor reacted with O2 in the crystal growth region, and ZnO crystals were obtained. The length of the crystals was about hundreds micron and the diameter was about tens micron. The strong polar growth tendency and the self-organized characteristics were found in ZnO crystals growing process.
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