掺钇(Ba,Ca)(Ti,Zr)O_3电容器陶瓷抗还原性的研究  

Reduction-resistant Properties of (Ba,Ca)(Ti,Zr)O_3 Capacitor Ceramics Doped Yttrium

作　　者：齐晓敏[1] 滕元成[1] 陈堃[1] 曾冲盛[1] 

机构地区：[1]西南科技大学先进建筑材料四川省重点实验室,四川绵阳621010

出　　处：《中国粉体技术》2008年第2期39-41,49,共4页China Powder Science and Technology

基　　金：四川省教育厅资助项目;编号:2006A102

摘　　要：对掺钇的(Ba,Ca)(Ti,Zr)O3(BCTZ)电容器陶瓷进行了抗还原性研究,研究了不同摩尔分数的钇的掺杂对BCTZ电容器陶瓷的介电性能、显微结构和密度的影响。结果表明,随着Y2O3掺杂量的增加,BCTZ陶瓷的室温介电常数、介质损耗逐渐减小,居里温度向低温方向移动,同时绝缘电阻率升高,BCTZ陶瓷抗还原性能提高;Y2O3的掺入能够促进BCTZ陶瓷的致密化,并有利于抑制BCTZ陶瓷的晶粒生长。The reduction-resistant properties of Y doped （Ba, Ca）（Ti, Zr）O3（BCTZ） ceramics was investigated. The influence of different molar fraction of substitution concentration on dielectric properties,microstructure and densiflcation was studied. The results showed that with the increase of Y2O3 amount the room-temperature dielectric constant and loss decreased, the curie temperature of BCTZ ceramics was shifted to lower temperature and the resulation resistivity increasee gradually, so the reduction-resistant properties of BCTZ ceramics was improved a lot. The densification is effectively accelerated and the grain growth is restrained by adding Y2O3.

关 键 词：钛酸钡 抗还原性 钇 介电性能 

分 类 号：TM223[一般工业技术—材料科学与工程] TM534[电气工程—电工理论与新技术]