InN半导体纳米晶相变活化能的研究  

Study on the transformation activation energy in InN semiconductor nanocrystals

作　　者：王建平[1] 王淑华[2] 耿贵立[3] 

机构地区：[1]山东商业职业技术学院工程技术系,山东济南 250103 [2]山东建筑大学机电学院,山东济南 250101 [3]山东大学材料科学与工程学院,山东济南 250061

出　　处：《山东大学学报（工学版）》2008年第2期42-44,共3页Journal of Shandong University（Engineering Science）

摘　　要：导出了相变活化能E与加热速率Φ和峰值温度Tp的关系表达式.用差示扫描量热分析法,研究了InN半导体纳米晶在不同加热速率条件下由室温立方相向高温六方相转变的特征参数Tp.然后根据导出的关系表达式和实验数据,计算所得的InN半导体纳米晶由立方相转变为六方相的相变活化能为E=1.3466×103 kJ/mol.The relationship between transformation activation energy E, heating rate φ and peak temperature Tp was induced. 3he characteristic parameter Tp was studied during the process of changing from the room temperature cubic phase to the high temperature hexagonal phase in InN semiconductor nanocrystals by differential scanning calorimetry at different heating rates. According to the induced expression and experimental data,the calculated transformation activation energy is E = 1.3d66 × 103 kJ/mol.

关 键 词：InN半导体纳米晶 差示扫描量热法 相变 活化能 

分 类 号：TB94[一般工业技术—计量学] TB99[机械工程—测试计量技术及仪器]