双极运算放大器辐射损伤效应研究  

Investigation on radiation effects of bipolar operational amplifiers

作　　者：郑玉展[1] 陆妩[1] 任迪远[1] 王改丽[1] 文林[2] 孙静[2] 

机构地区：[1]中国科学院新疆理化技术研究所 [2]新疆大学物理学院,乌鲁木齐830046

出　　处：《核技术》2008年第4期270-274,共5页Nuclear Techniques

摘　　要：本文研究了不同制造商的同型号双极运算放大器的辐射效应和室温退火行为,发现同型号产品的辐射效应有很大差异。我们分析了此类辐射效应差异的主要原因,对双极运算放大器高低剂量率下的辐射效应作了解释。计算了它们的损伤增强因子和退火因子,结果表明,同种型号运放电路的损伤增强因子间的最大差异可达约8倍。Radiation effects and room-temperature annealing behaviors of bipolar operational amplifiers （op amps） of the same type but different manufacturers are investigated in this paper. It was found that the radiation effects of the same type op amps differed a lot among the manufacturers. The main reasons of the radiation-effect difference are analyzed and discussed, and radiation effects at high and low dose rates are explained. The damage enhancement factor and annealing factor of the op amps are calculated, and the biggest difference of the enhancement factor among different manufacturers is about 8.

关 键 词：双极运算放大器 60Coγ辐射 辐射效应 增强因子 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722