Mg掺杂Pb_(0.3)Sr_(0.7)(Ti_(1-x)Mg_xO)_(3-x)陶瓷薄膜的制备及介电性能研究  

Study on the Dielectric Properties of Pb_(0.3)Sr_(0.7)(Ti_(1-x)Mg_x)O_(3-x) Thin Films Prepared by RF-Magnetron Sputtering

作　　者：陈敬峰[1] 杜丕一[1] 覃莹[1] 翁文剑[1] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《稀有金属材料与工程》2008年第A01期86-89,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50372057);国家自然科学基金重点项(50332030);国家重大基础研究项目("973"计划)(2002CB613302)资助

摘　　要：利用固相烧结法制备的Mg掺杂Pb_(0.3)Sr_(0.7)(Ti_(1-x)Mg_x)O_(3-x)(PST)陶瓷为靶材,采用射频磁控溅射法在ITO玻璃基板上成功制备了Mg掺杂PST薄膜。用X射线衍射仪、扫描电子显微镜和阻抗分析仪分别测定PST薄膜的物相结构、表面形貌及介电性能。结果显示,薄膜具有良好的钙钛矿结构,无明显的择优取向生成,薄膜表面均匀致密。Mg的掺杂改善了PST薄膜电容值的频率特性,使其更加稳定。薄膜电容值随着掺杂含量的增加而降低,在Mg掺杂量x=0.05左右时达到相对最低值,随后略有升高,介电损耗也有类似现象。薄膜可调性受Mg掺杂量的增加而不断下降,总体下降约3倍,但介电损耗总体下降约达5倍。材料的优值在Mg掺杂量x=0.05时反而有所升高。Magnesium doped （Pb, Sr）TiO3 thin films on ITO conductive film glass substrate were prepared by the rf （radio frequency） magnetron sputtering method. X-ray diffraction, scanning electron microscopy and Impedance Analyzer were applied to analyze the crystalline phase structure, surface morphology and dielectric properties. All films showed a perovskite structure without preferred orientation. The films had dense structure. Mg addition improved the capacitance-frequency property and made it more stable. The capacitance at low frequency decreased with Mg content increasing and reached the lowest when Mg was x=0.05, but then increased while Mg content continued increasing. The dielectric loss had the same trend. The dielectric tunability decreased with Mg addition, but the figure of merit （FOM） kept stable and a little increase when the doping content of Mg was x=0.05. The results showed that Mg doping could decrease dielectric loss effectively while keep the FOM stable.

关 键 词：PST薄膜 射频磁控溅射 Mg掺杂 介电性能 

分 类 号：TB43[一般工业技术]