La掺杂Bi_4Ti_3O_(12)薄膜的溶胶-凝胶制备工艺研究  

Synthesis and Characterization of La Doped Bi_4Ti_3O_(12) Thin Film by Sol-Gel Reactions

作　　者：王文[1] 栗华美[1] 孟庆昌[1] 贾德昌[1] 周玉[1] 

机构地区：[1]哈尔滨工业大学,黑龙江哈尔滨150001

出　　处：《稀有金属材料与工程》2008年第A01期539-541,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助项目(50502013);黑龙江省青年基金项目(QC05C06)

摘　　要：采用溶胶-凝胶法合成了Bi_4Ti_3O_(12)(简称BTO)和La掺杂Bi_(4-x)La_xTi_3O_(12)(简称BLT)薄膜,通过TG-DTA、XRD、AFM等技术手段研究了薄膜的制备工艺、相组成和微观形貌。研究表明:用乙醇铋(自制)、钛酸正丁酯和硝酸镧作为原料,乙二醇、冰乙酸作为溶剂,在Pt(111)/Ti/SiO_2/Si结构的基片上,Sol-Gel法旋涂的薄膜经60℃干燥,反复涂覆5次,60℃干燥,300℃除有机物,550℃快速热处理10 min可得到钙钛矿相BTO薄膜。600℃快速热处理的薄膜比随炉冷却的薄膜均匀致密,随着La含量增加薄膜晶粒细化。BLT （Bi4-xLaxTi3O12） thin films were prepared by sol-gel technique. The phase and microstructure of the film were investigated by TG-DSC, XRD and AFM. The BLT sol was chemically homogeneous in reaction of triethoxy bismuth, tetrabutyl titanium and lanthanum nitrate as starting materials, ethylene glycol as solvent and glacial acetic （HAc） as catalyst. Dense and uniform BLT thin films of perovskite phase was fabricated on Pt/Ti/SiO2/Si substrate by coating the gel in 5 cycles, drying at 60 ℃, organic matter removing at 300 ℃ for 10 min, and then crystallizing at 550 ℃ or 600℃. The Bi4Ti3O12 ferroelectric films doped with La^3＋ formed smaller grains.

关 键 词：La-掺杂 BLT铁电薄膜 制备工艺 

分 类 号：TM221[一般工业技术—材料科学与工程]