高频正弦波电流下IGBT能带结构和开关特性分析  

Analysis of Energy-band Structure and Switching Characteristics of IGBT Under High Frequency Sinusoidal Current

作　　者：孙孝峰[1] 金晓毅[1] 邬伟扬[1] 吴俊娟[1] 

机构地区：[1]燕山大学电气工程学院,河北省秦皇岛市066004

出　　处：《中国电机工程学报》2008年第12期101-106,共6页Proceedings of the CSEE

基　　金：国家自然科学基金项目(50237020)~~

摘　　要：基于能带理论——载流子浓度分布与电极距离函数的宏观体现,该文提出了一种IGBT在高频正弦波电流及零电流开关条件下开关动态特性的分析方法。首先介绍了功率器件在实际电路中的工作条件,其次提出了IGBT的能带结构图,并通过对独立元件、稳态及暂态时的能带图的分析比较,得出开关动态特性,并给出开关时刻的电压电流初值及能带图;实验结果也验证了IGBT在高频正弦波电流下零电流开关的开关特性;根据这个特性,文章采用随谐振电流大小微调开关频率的方法,来实现功率管电压过冲的完全抑制。Based on the energy-band which is the macroscopical embodiment of the function between carrier concentration distribution and distance from electrode, the paper presents a methodology to analyze the switching dynamic characteristics of IGBTs under high frequency sinusoidal current and zero-current switching （ZCS） conditions. Firstly, the switching principle of devices which were used in a practical application was given. Then, by analyzing and comparing the energy-band diagrams of IGBTs under the individual state, steady-state and transient-state respectively, there has a common variation tendency during the switching period. Experimental results also validate the switching characteristic of IGBT under ZCS. As a result, this characteristic is used to suppress the switching voltage overshot by changing switching frequency along with the resonant current variety for the power semiconductor devices.

关 键 词：能带理论 零电流开关 开关动态特性 功率半导体器件 电压过冲 串联谐振 

分 类 号：TM77[电气工程—电力系统及自动化]