负压引起高压驱动芯片电路失效的解决方案  

Solutions to High Voltage Driving IC Failure Caused by Minus Voltage

作　　者：褚卫东[1] 李海华[1] 

机构地区：[1]上海交通大学微纳科学技术研究院,上海200030

出　　处：《电子科技》2008年第5期1-4,29,共5页Electronic Science and Technology

摘　　要：介绍了高压驱动芯片的内部原理;分析了感性负载电路中负压产生的原因和引起高压驱动芯片误触发而使产品失效的机理;列举了两种通用的解决方法,并提出了另一种更为有效的方案,该方案已经在实际产品的电路中得到应用,取得了很好的效果。The basic internal circuit of high voltage driving IC is introduced. The reason of the minus voltage in inductive load circuit and the false triggering of high voltage IC which leads to failure are analyzed. Along with the two common solutions available, a new effective solution is presented which has been put into practical use with desirable results.

关 键 词：自举电路 感性负载 高压驱动芯片 

分 类 号：TN14[电子电信—物理电子学]