Sinusoidal Steady State Analysis on 4H-SiC Buried Channel MOSFETs  

作　　者：张韬 吕红亮 张义门 张玉明 叶丽辉 

机构地区：[1]Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi' an 710071

出　　处：《Chinese Physics Letters》2008年第5期1818-1821,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60606022.

摘　　要：With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.

关 键 词：INTERFACE STATES SILICON-CARBIDE MOS DEVICES MOBILITY SIMULATION DENSITY 6H 

分 类 号：O4[理学—物理]