氧化铋薄膜的制备及其性能表征  

Preparation and Characterization of Bismuth Oxide Thin Films

作　　者：张争光[1] 王秀峰[1] 王莉丽[1] 田清泉[1] 

机构地区：[1]陕西科技大学材料科学与工程学院

出　　处：《硅酸盐通报》2008年第2期411-414,共4页Bulletin of the Chinese Ceramic Society

摘　　要：利用化学水浴沉积法在室温下制备了多晶氧化铋薄膜,并在350℃的空气气氛条件下进行退火处理,得到纯的α-Bi2O3薄膜。对它们的晶相结构、光电性能进行测试。从X衍射分析结果来看,在退火过程中,薄膜结构由四方相和非化学计量相向单斜相转变。光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动,发生红移现象,而且禁带宽度减少了0.4eV。退火后的薄膜在室温下暗电导率下降2个数量级。电导率的变化显示具有半导体行为的性质。Bismuth oxide thin films were deposited by chemical bath deposition from bismuth nitrate solution and annealed at 350℃ in air. Their structural, optical and electrical properties were tested. It was found that after annealing, tetragonal and non-stoichiometric phases were converted into pure monoclinic Bi2O3 by X-ray diffraction patterns. It also showed that the optical absorption edge of the annealed film appeared shifted towards the longer wavelength side and the band gap decreased by 0.4eV. The dark electrical conductivity of the thin film at room temperature decreased to two orders of magnitude after annealing.

关 键 词：氧化铋 化学水浴法 禁带宽度 电导率 

分 类 号：TB34[一般工业技术—材料科学与工程]