ZnO压敏陶瓷界面态起源与本质的研究  

Research on Origin and Essence of ZnO Varistor Interface States

作　　者：孟继轲[1] 李莉[2] 

机构地区：[1]太原科技大学,山西太原030024 [2]山西大学,山西太原030006

出　　处：《红外》2008年第5期37-40,共4页Infrared

基　　金：山西大学科研基金(05)

摘　　要：以双肖特基势垒模型为基础,分析了ZnO压敏陶瓷中界面态的起源及本质。分析结果认为,在晶界处,大离子半径的Bi和Ba偏析至界面,是造成界面态密度N_s的主要原因;氧以化学吸附氧的形式存在,对提高界面态密度也起关键作用。因此,ZnO压敏陶瓷中的界面态主要来源于非本征界面态。对界面态本质讨论的结果认为,应区分界面态密度N_s及有效界面态密度n_s,在做上述区分后,导电机理的解释及势垒高度Φ_b的计算将更趋于合理化。On the basis of a double Schottkey barrier model, the origin and essence of the interface states in ZnO varister ceramics are analyzed. The analysis result shows that the key factor to increase the interface state density Ns is the segregation of Bi and Ba with larger ionic radii at grain boundary to interface; the presense of the chemisorbed oxygen is also critical to the increase of the interface state density Ns. Therefore, the interface state in the ZnO varister ceramics mainly originates from the extrinsic interface state. The analysis result of the essence of interface state shows that the interface state density Ns and the effective interface acceptor state density ns should be distinguished. Through the above distinguishing, the explanation of electric conduction mechanism and the calculation of barrier height Фb tend be more reasonable.

关 键 词：ZNO压敏陶瓷 肖特基势垒 界面态 非线性性能 

分 类 号：TN304[电子电信—物理电子学]