具有双绝缘层的有机薄膜晶体管  

Organic thin film transistors with double insulator layers

作　　者：刘向[1] 白钰[1] 陈玲[1] 朱文清[1] 蒋雪茵[1] 张志林[1] 

机构地区：[1]上海大学材料学院

出　　处：《光电子．激光》2008年第5期577-580,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(90202034,60477014,60577041);国家“973”资助项目(2002CB613400)

摘　　要：为了提高SiO2单绝缘层器件的性能,在SiO2绝缘层的表面用旋涂的方法制备一层大约50 nm厚度的PMMA。实验结果表明用无机/有机双绝缘层可以有效的提高器件的性能同时降低器件的漏电流。计算出了载流子迁移率和开关电流比,基于PMMA/SiO2双绝缘层器件的载流子迁移率和开关电流比分别是4.0×10-3cm2/Vs和104。We have investigated a double layer structured gate dielectric for the organic thin films transistor（OTFT） to improve the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layers is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical pararneters such as carrier mobility and on/off ratio by field effect measurement have been calculated. OTFTs based on PMMA/SiO2 double insulator with a field-effect mobility of 4.0×10^-3 cm^2/Vs and on/off ratio of 10%4 have been obtained.

关 键 词：有机薄膜晶体管 迁移率 PMMA 开关电流比 

分 类 号：TN386.2[电子电信—物理电子学]