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作 者:DING Gui-ying WANG Jin JIANG Wen-long WANG Jing WANG Li-zhong CHANG Xi
机构地区:[1]College of Information Technology, Jilin Normal University, Siping 136000,China
出 处:《Optoelectronics Letters》2008年第3期205-208,共4页光电子快报(英文版)
基 金:the Ministry of Science and Technol- ogy of Jilin under Grant No. 20050523;the Grant for the Scien- tific Research from the educational office of Jilin (Project No.25, [2003]; 54, [2004]);the Grant from the department of Science and Technology of Siping [Project No.2005007; 2006008]
摘 要:We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.
分 类 号:TN383[电子电信—物理电子学]
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