New insert layer structure OLEDs  被引量:4

New insert layer structure OLEDs

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作  者:GAO Zhi-xiang HAO Yu-ying LEI Jun-feng MA Cheng XU Bing-she 

机构地区:[1]Department of Physics, Taiyuan University of Technology, Taiyuan 030024, China [2]College of Physics and Electronic Science, Shanxi Datong Univershity, Datong 037009, China [3]College of Materials Science and Engineering, Tiliyuan University of Technology, Taiyuan 030024, China

出  处:《Optoelectronics Letters》2008年第3期209-212,共4页光电子快报(英文版)

基  金:the National Natural Science Founda- tion of China (No. 20671068 and 20471041)

摘  要:An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.

关 键 词:插入层 结构特征 有机元素 场致发光 

分 类 号:TN383[电子电信—物理电子学]

 

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