硅温敏二极管研制  

Development of Temperature sensitive Silicon Diodes

作　　者：吴孙桃[1] 周海文[1] 杨松鹤 吴荣华[1] 陈议明[1] 

机构地区：[1]厦门大学物理学系

出　　处：《厦门大学学报（自然科学版）》1997年第6期865-868,共4页Journal of Xiamen University：Natural Science

基　　金：福建省科技资助

摘　　要：由硅材料电阻率的选择、结面积设计的不同，试制几种温敏二极管，在恒定电流下，测量室温至１２０℃温度范围内正向电压Ｖｆ与温度Ｔ的关系，测试结果表明，Ｖｆ－Ｔ特性曲线线性优良，在恒定电流为５０μＡ下，灵敏度最高的可达２．７０ｍＶ／℃．根据测试结果，对提高灵敏度等特性进行一些讨论．Several types of temperature sensitive silicon diodes have been produced on trial by the different selection of the silicon material resistivity and the different design of the PN junction area. The relationship between the forward voltage V f and temperature T has been measured from room temperature to 120℃ under a constant current. The results indicate that the V f T characteristic presents an excellent linearity, and the maximum sensitivity comes up to 2.70 mV/℃ under 50 μA constant forward current. The discussions about increasing the sensitivity and some other characteristics have been done according to the measurement results.

关 键 词：硅二极管 灵敏度 温敏二极管 温度传感器 

分 类 号：TN315.2[电子电信—物理电子学] TH811[机械工程—仪器科学与技术]