A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation  

作　　者：孟祥提 黄强 马艳秀 郑永男 范平 朱升云 

机构地区：[1]Institute of Nuclear and New Energy Technology,Tsinghua University [2]China Institute of Atomic Energy

出　　处：《Chinese Physics C》2008年第6期442-445,共4页中国物理C（英文版）

基　　金：National Natural Science Foundation of China(10375034,10075029)

摘　　要：The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1× 10^9 to 4×10^10 cm^-2 and 1 × 10^9 to 2×10^12 cm^-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×10^l0 and 2×10^12 cm^-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1× 10^9 to 4×10^10 cm^-2 and 1 × 10^9 to 2×10^12 cm^-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×10^l0 and 2×10^12 cm^-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

关 键 词：semiconductor technology CMOS image sensor proton irradiation average brightness TRIM simulation 

分 类 号：O572.341[理学—粒子物理与原子核物理]