坩埚下降法钨酸铋钠晶体生长及其生长面研究  

Growth of NaBi(WO_4)_2 Crystal and Study of the Growth Face

作　　者：史宏声[1] 任国浩[2] 仲维卓[2] 

机构地区：[1]中国计量学院,杭州310018 [2]中国科学院上海硅酸盐研究所,上海201800

出　　处：《人工晶体学报》2008年第2期301-304,共4页Journal of Synthetic Crystals

摘　　要：本文用坩埚下降法自发成核的方法生长了钨酸铋钠NaBi(WO4)2晶体,得到了尺寸达18×18×52 mm3的透明晶体。研究了该晶体的生长面,发现晶体的生长面以(001)面为主,并运用布拉维(Bravais)法则和负离子配位多面体生长基元理论对这一现象进行了分析。The NaBi （WO4 ）2 （NBW） crystal was grown by the Bridgman method through the spontaneously crystallization. The transparent NBW crystal with 18 × 18 × 52 mm3 was obtained. The growth face of NBW crystal was studied. And it was found that most of the growth faces are （001）. This phenomenon can be well explained by the Bravais law and the theoretical model of anionic coordination polyhedron growth units.

关 键 词：NaBi(WO4)2晶体 自发成核 生长面 

分 类 号：O713[理学—晶体学]