MgO掺杂对PMMN四元系压电陶瓷结构与性能的影响  

Effect of Excess MgO on Properties of Quaternary System PMMN Piezoelectric Ceramics

作　　者：蒋红霞[1] 周桃生 彭绯[1] 尚勋忠[1] 余祖高[1] 

机构地区：[1]湖北大学材料科学与工程学院铁电压电材料与器件湖北省重点实验室,武汉430062

出　　处：《人工晶体学报》2008年第2期356-359,共4页Journal of Synthetic Crystals

基　　金：湖北省科技攻关资助项目(2004AA101C70);湖北省教育厅重点资助项目(2004D009)

摘　　要：采用固相烧结法制备添加过量MgO的铌镁-铌锰-锆钛酸铅(PMMN)四元系压电陶瓷材料,研究了不同MgO掺杂量对材料结构及压电介电性能的影响。实验结果表明,适量MgO掺杂,不仅不改变PMMN压电陶瓷的钙钛矿相结构,且能提高合成粉体的晶化程度,降低陶瓷的烧结温度,改善材料的压电介电性能。当MgO掺杂量为0.25%质量分数,1130℃烧结的样品性能参数为:d33=310 pC/N,Qm=1008,kp=0.61,tanδ=0.34%,ε33T/ε0=1494,是一种中温烧结功率型压电陶瓷材料,适用于多层压电变压器,超声马达等器件。PMMN-quatemary system piezoelectric ceramics with excess amounts of MgO were prepared by solid sintering method. The effects of different amounts of MgO on the phase structure, microstructure, piezoelectric and dielectric properties of ceramics materials were studied. The results show that MgO-doped PMMN ceramics present a single perovskite structure, MgO contributes to the crystallization of powder, as shown by scanning electron microscopy. The piezoelectric and dielectric properties of PMMN ceramics were improved and the sintering temperature was decreased with proper amount of MgO. When the amount of MgO is 0.25 wt%, the ceramics show the optimitzed property parameters with Qm = 1008 ,kp =0.61, d33=310 pC/N,ε33T/ε0=1494,tanδ=0.34%. In addition, the sintering temperature of it was 1130℃, which shows it is a kind of middle-temperature sintered power dielectric materials.

关 键 词：压电陶瓷 铌镁-铌锰-锆钛酸铅 MgO掺杂 压电介电性能 

分 类 号：TM282[一般工业技术—材料科学与工程]