ZnO/SnO_2复合透明导电膜性能的研究  

Study on Property of ZnO/SnO_2 Transparent Conductive Films

作　　者：高哲[1] 卢景霄[1] 陈庆东[1] 刘玉芬[1] 王子健[1] 陈永生[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2008年第2期417-421,共5页Journal of Synthetic Crystals

基　　金：国家"973"重大基础研究发展规划项目(No.2006CB202601)

摘　　要：采用直流磁控溅射工艺在SnO2透明导电玻璃上沉积一层ZnO膜,制备出ZnO/SnO2复合透明导电膜,作为硅薄膜太阳电池前电极。比较了具有不同ZnO厚度的复合膜氢轰击前后的光电性能,发现适当控制ZnO膜的厚度至关重要。研究了快速热退火(RTA)对薄膜的结构及光电性能的影响,发现400℃退火能够改善薄膜的光学性能。ZnO/SnO2 transparent conductive films that are suitable for the top electrode of Si-based thin film solar cells were prepared by sputtering a layer of ZnO on SnO2 conductive glass. ZnO films were deposited by DC reactive magnetron sputtering. The electrical and optical properties of film before and after H bombardment and rapid thermal annealing （RTA） are discussed. It was shown that the thickness of ZnO is important to the multiple films and the optical property of the films is improved after annealing at 400 ℃.

关 键 词：ZnO/SnO2复合膜 快速热退火(RTA) 氢轰击 透过率 

分 类 号：O484[理学—固体物理]