辐照条件下光电耦合器的电流传输比模型  

Current Transfer Ratio Model of Optocoupler in Radiations

作　　者：李应辉[1] 陈春霞[2] 蒋城[2] 刘永智[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2008年第2期158-161,共4页Semiconductor Optoelectronics

摘　　要：研究了辐照对光电耦合器各组成部分光电参数影响的机理,建立了光电耦合器在辐照条件下的电流传输比(CTR)模型。研究结果表明,辐照在发光二极管(LED)中引入界面态陷阱,产生非辐射复合,使LED的输出光功率下降;辐照改变了光敏二极管的少数载流子扩散长度,使光照产生的等效载流子数减少,进而使同样光照下的光电流减少;辐照在晶体管基极引入表面态陷阱,使基极复合电流增加,晶体管增益下降,从而使光电耦合器CTR下降。实验结果验证了所得理论模型的正确性。Base on research of the influence of radiation on its photoelectricity parameters,a current trasfer ratio（CTR） radiation model of a optocoupler was established. As the totao dose increases, non-radiation recombination of interface trap in LED caused by radiation grows and the outpur light power of LED reduces. Radiation changes the diffuse length of minority carriers in photosensitive diode, decrasing the equivalent carriers, then lowering the photocurrent. The surface state in the base of the transistor caused by ratiation increases the complex current of the base,lowers the grain of the trasistor, and reduces CTR. Experimental results demonstrate the accuracy of the theory model.

关 键 词：光电耦合器 辐照 电流传输比 

分 类 号：TN36[电子电信—物理电子学]