隧道再生半导体激光器的三维稳态热特性研究  

Three Dimension Thermal Characteristic Analysis of Tunnel Regeneration Semiconductor Laser

作　　者：张蕾[1] 崔碧峰[1] 郭伟玲[1] 王智群[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室

出　　处：《半导体光电》2008年第2期177-180,共4页Semiconductor Optoelectronics

基　　金：国家“973”计划项目(2006CB604902);国家“863”计划项目(2004AA311030);十五科技攻关项目(2003BA316A01-01-08);国家自然科学基金(60506012);北京市科委重点项目(D0404003040221);北京市教委项目(kz200510005003);北京市人才强教计划项目(05002015200504)

摘　　要：针对隧道再生半导体激光器,建立了内部的热源分布模型,利用有限元方法模拟计算得到了两有源区隧道再生半导体激光器稳态三维温度分布。模拟结果表明,靠近衬底的有源区的光出射腔面中心的温度最高。在平行于结的方向上,温升集中在脊形电极内;在垂直于结的方向上,靠近衬底的有源区温度始终高于靠近热沉的有源区的温度;沿腔长方向,在光反射腔面附近温度下降较快。随着注入电流的增大,两有源区的温度升高,温差变大。实验测量了不同注入电流下器件的峰值波长,将其转换为温升,与模拟结果吻合。A model of heat source is presented for tunnel regeneration semiconductor laser. Three dimension steady-state temperature distribution of laser diode with two active regions was simulated by using the finite element method. It is found that the highest temperature is in the stripe center of the front emitting facet of the active region close to the substrate. Along the direction perpendicular to the junction, temperature of the active region close to the substrate is higher than that of the active region close to the heat sink. Temperature of the rear facet increases much slowly for the asymmetric packaging along the resonator. With the increasing of the injecting current, the temperature and the temperature difference between the two active regions are rising, which is in agreement with the measured data.

关 键 词：半导体激光器 三维温度分布 稳态 隧道再生 

分 类 号：TN248.4[电子电信—物理电子学]