热处理对P3HT与PCBM共混体系光电性能的影响  

Annealing Treatment Effect on Photoelectric Properties of P3HT∶PCBM Blend System

作　　者：於黄忠[1,2] 彭俊彪[2] 

机构地区：[1]华南理工大学物理科学与技术学院,广州510640 [2]华南理工大学高分子光电材料及器件研究所,特种功能材料教育部重点实验室,广州510640

出　　处：《物理化学学报》2008年第5期905-908,共4页Acta Physico-Chimica Sinica

基　　金：国家重点基础研究发展规划(973)项目(2002CB613405);国家自然科学基金(90201023);华南理工大学自然科学基金(E5040910)资助

摘　　要：从紫外-可见光谱(UV-Vis)、光致发光谱(PL)、X射线衍射(XRD)图及太阳电池性能等方面,分析了热处理对聚噻吩P3HT(poly(3-hexylthiophene))与C60的衍生物PCBM([6,6]-phenylC61-butyricacidmethylester)共混体系光电性能的影响.紫外可见光谱表明,热处理使P3HT∶PCBM共混体系所成膜的吸收峰增强并红移.光致发光谱及X-射线衍射图表明,热处理使其光谱峰及衍射峰增强.以P3HT为电子给体材料,PCBM为电子受体材料,制成了共混体系太阳电池.热处理使得器件性能大幅度提高.其热处理光电池在100mW·cm-2强度光照下,开路电压Voc为0.55V,短路电流密度Jsc为9.87mA·cm-2,填充因子FF为60.1%,能量转换效率η为3.26%.The effect of annealing treatment on the photoelectric properties of poly（3-hexylthiophene） （P3HT）：[6,6]-phenyl-C61-butyric acid methyl ester（PCBM） was analyzed by UV-Vis absorption spectroscopy, photoluminescence （PL） spectroscopy, X-ray diffraction, and solar cell performance. The UV-Vis absorption peaks of P3HT∶PCBM thin film showed enhancement and a red-shift after thermal annealing. PL and XRD peak intensities increased by annealing treatment. A solar cell based on the blend of P3HT∶PCBM was fabricated, and the device performance was significantly improved by thermal annealing. For devices heat-treated at 130 ℃, open circuit voltage of 0.55 V, short circuit current density of 9.87 mA·cm-2, fill factor of 60.1% and power conversion efficiency （PCE） of 3.26% were achieved under 100 mW·cm-2 air-mass 1.5 solar simulator illumination.

关 键 词：热处理 聚合物 光电性能 共混体系 

分 类 号：TM914.4[电气工程—电力电子与电力传动]