Er,O离子共注入GaAs的二次离子质谱的研究  

SECONDARY ION MASS SPECTROMETRY OF ERBIUM AND OXYGEN CO IMPLANTED IN GaAs

作　　者：陈辰嘉[1] 李海涛[1] 王学忠[1] 周必忠[2] 雷红兵[2] 肖方方 

机构地区：[1]北京大学物理系 [2]厦门大学物理系

出　　处：《红外与毫米波学报》1997年第6期413-417,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金;北京大学稀土材料化学应用国家重点实验室基金

摘　　要：在Ⅲ－Ⅴ族半导体ＧａＡｓ外延层上共注入Ｅｒ和Ｏ离子（ＧａＡｓ：Ｅｒ，Ｏ）．经面对面优化退火后，光致发光（ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ－ＰＬ）谱中观测到对应Ｅｒ３＋第一激发态到基态４Ｉ１３／２－４Ｉ１５／２跃迁，其相对强度较单注入Ｅｒ的ＧａＡｓ（ＧａＡｓ：Ｅｒ）增强１０倍，且谱线变窄．从二次离子质谱（ＳｅｃｏｎｄａｒｙＩｏｎＭａｓＳｐｅｃｔｒｏｍｅｔｒｙ－ＳＩＭＳ）和卢瑟福背散射实验给出退火前后Ｅｒ在ＧａＡｓ：Ｅｒ样品中的剖面分布．ＳＩＭＳ测量分别给出Ｏ注入前后Ｅｒ和Ｏ在ＧａＡｓ：Ｅｒ，Ｏ中的深度剖面分布，分析表明Ｅｒ和Ｏ共注入后形成光学激活有效的发光中心．Er and O ions were co implanted in Ⅲ Ⅴ compound semiconductor GaAs (GaAs:Er,O). After face to face annealing the sharp photoluminescence (PL) spectra were observed at 1.538μm, which correspond to the transition from the first excited state 4I 13/2 to the ground state 4I 15/2 of Er 3+ . The intensity of PL was enhanced about ten times in comparison with the only Er implanted GaAs sample: GaAs:Er. Depth profiles of Er implanted concentration were obtained and analyzed by Secondary Ion Mass Spectrometry(SIMS) and Rutherford Back Scattering(RBS) measurements as implanted and annealed. Depth profiles of Er and O co implanted were analyzed and studied by SIMS. The results indicate that a kind of optically active efficient luminescence center is formed in GaAs:Er,O.

关 键 词：饵 氧 离子共注入 二次离子质谱 砷化镓 发光学 

分 类 号：TN304.23[电子电信—物理电子学] O482.31[理学—固体物理]