非制冷红外微测辐射热计的研制  

DEVELOPMENT OF UNCOOLED INFRARED MICROBOLOMETER

作　　者：刘西钉[1] 江美玲[1] 冯晓梅 丁爱娣[1] 梁平治[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《红外与毫米波学报》1997年第6期459-462,共4页Journal of Infrared and Millimeter Waves

摘　　要：采用多晶硅薄膜材料作为热敏电阻材料，以普通的ＩＣ工艺及微机械加工技术研制成功了在室温下工作的红外微测辐射热计，其多晶硅电阻温度系数为－２％℃－１，探测率Ｄ＊达２×１０８ｃｍ·Ｈｚ１／２·Ｗ－１．By using conventional Si LSI process and micromachining technology, a microbridge structure for the thermal isolation was made and a microbolometer was formed. Poly Si film material was used as the thermally sensitive resister because of its wide use in current IC technology. The detectivity (D *) of some 2×10 8cm·Hz 1/2 ·W -1 was observed.

关 键 词：多晶硅 非制冷 微测辐射热计 红外 辐射热计 

分 类 号：O551.1[理学—热学与物质分子运动论] TK113[理学—物理]