应用于THz辐射的ZnTe单晶生长及测试  

Growth and Characteristics of ZnTe Single Crystal for THz Technology

作　　者：王仍[1] 方维政[1] 赵培[1] 张雷[1] 葛进[1] 袁诗鑫[1] 张惠尔[1] 胡淑红[1] 戴宁[1] 陈晓姝[2] 吴晓君[2] 何山[2] 王钢[2] 

机构地区：[1]中国科学院上海技术物理所红外国家重点实验室,上海200083 [2]中山大学光电材料与技术国家重点实验室,广州510275

出　　处：《Journal of Semiconductors》2008年第5期940-943,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2006AA12Z135);上海应用材料研究与发展基金(批准号:06SA05)资助项目~~

摘　　要：利用Te溶剂方法生长出ZnTe单晶．经X射线衍射测试，发现晶锭中存在沿（110）晶向生长的大晶粒，可以切出10mm×10mm的单晶片．傅里叶红外变换光谱仪测得ZnTe晶体在2．5～20μm波段的红外透过率约为61％．通过测可见一红外波段的透射光谱，得出禁带宽度为2．24eV．利用飞秒激光作用在一块ZnTe单晶同时产生-探测THz脉冲，观察到0．18ps的THz辐射场分布，相应的频谱分布为5THz．ZnTe single crystals were grown perfectly by employing the Te-solution method. X-ray diffraction was introduced to investigate the crystals,and 〈110〉 oriented crystals of 10mm × 10mm size were obtained. The transmittance is about 61% in range of 2.5～20mm,as measured with a Fourier Transform Infrared spectrometer. The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24eV. Moreover,a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti.. sapphire amplifier system. The THz radiation signal has a pulse width of about 0.18ps and frequency bandwidth of 5THz.

关 键 词：Te溶剂方法 ZnTe单晶 XRD THZ 

分 类 号：O78[理学—晶体学]