多晶硅薄膜晶体管自加热效应温度分布的有限元模拟  

Finite Element Analysis of Temperature Distribution of Polysilicon TFTs Under Self-Heating Stress

作　　者：杨震宇[1] 王明湘[1] 王槐生[1] 

机构地区：[1]苏州大学微电子学系,苏州215021

出　　处：《Journal of Semiconductors》2008年第5期954-959,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60406001)~~

摘　　要：采用有限元方法模拟了n型MILC低温多晶硅薄膜晶体管在直流自加热应力下器件的温度分布.通过对器件沟道温度分布的稳态及瞬态模拟,研究了器件功率密度、衬底材料类型和器件宽长等关键因素的影响.确认了改善器件自加热退化的有效途径,同时有助于揭示多晶硅薄膜晶体管自加热退化的内在机制.The temperature distribution of typical-sized n-type polycrystalline silicon thin film transistors under self-heating （SH） stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density,substrate material, and channel width on temperature distribution is analyzed. This study is useful for understanding the mechanism of self-heating degradation, and to find approaches to effectively alleviate the SH effect in device operation.

关 键 词：有限元分析 温度分布 薄膜晶体管 自加热退化 稳态及瞬态模拟 

分 类 号：TN321.5[电子电信—物理电子学]