高氧空位氧化锌晶体的制备及光催化性能  

The Preparation and Photocatalytic Activity Property of High Oxygen Vacancies ZnO Crystal

作　　者：崔小斌[1,2] 黄礼胜[2] 周亚军[2] 沈临江[2] 崔一平[1] 

机构地区：[1]东南大学电子科学与工程学院,江苏南京210096 [2]南京工业大学理学院,江苏南京210093

出　　处：《中国材料科技与设备》2008年第3期52-54,共3页Chinese Materials Science Technology & Equipment

摘　　要：利用气相沉积法，在低氧气氛下制备高缺陷的ZnO晶体。分别将样品在800℃、900℃、1000℃下通氧退火1h，对ZnO晶体做表面修饰。PL光谱实验和光催化降解亚甲基蓝实验表明ZnO晶体的氧空位、表面态和光催化活性间存在内在联系。1000℃下退火的样品表面缺陷程度多于800℃和900℃下退火样品，光催化活性也优于后两者。High oxygen vacancies ZnO crystal was prepared under the anoxic condition by the CVD method. Then the samples were annealed at 800℃, 900℃, 1000℃ temperature for one hour in oxygen ambient to modify the surface state of ZnO crystal. Photoluminescence spectrum and photocatalytic degradation experiments show there are some inherent relationships among the oxygen vacancies, surface state and photocatalytic activity. More oxygen vacancies were obtained under high annealing temperature. And the defect degree of annealed sample surfaces were higher at 1000℃ than at 800℃ and 900℃. The same result was found for the photocatalytic activity.

关 键 词：光催化 氧化锌 氧空位 亚甲基蓝 

分 类 号：TQ425.216[化学工程]