Intrinsic stress analysis of sputtered carbon film  

作　　者：刘丽琴 王占山 朱京涛 张众 谭默言 黄秋实 陈锐 徐敬 陈玲燕 

机构地区：[1]Institute of Precision Optical Engineering,Tongji University

出　　处：《Chinese Optics Letters》2008年第5期384-385,共2页中国光学快报（英文版）

基　　金：the National Natural Sci-ence Foundation of China (No.10435050,10675092,and 10675091);the"863"Project Plan (No.2006AA12Z139);the Program for New Century Excellent Talents in University (No.NCET-04-0376).

摘　　要：Intrinsic stresses of carbon films deposited by direct current （DC） magnetron sputtering were investigated. The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses. The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition. By varying argon pressure and target-substrate distance, energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level. The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.Intrinsic stresses of carbon films deposited by direct current （DC） magnetron sputtering were investigated. The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses. The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition. By varying argon pressure and target-substrate distance, energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level. The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.

关 键 词：ARGON CARBON Inert gases Magnetron sputtering Stress relief SUBSTRATES 

分 类 号：O484.2[理学—固体物理]