Self-formation of void array in Al_2O_3 crystal by femtosecond laser irradiation  

作　　者：胡晓 宋娟 周秦岭 杨旅云 王晓丹 朱从善 邱建荣 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences [2]State Key Laboratory of Silicon Materials,Zhejiang University

出　　处：《Chinese Optics Letters》2008年第5期388-390,共3页中国光学快报（英文版）

基　　金：the National Natural Science Foundation of China (No.50672087);the National Basic Research Program of China (No.2006CB806000b).

摘　　要：The femtosecond laser induced void array inside Al2O3 crystals was discussed. The void array was formed spontaneously under the irradiation of a single beam of infrared femtosecond laser which was focused at a fixed point inside the Al2O3 crystal sample. It was found that the regular voids only could be fabricated near the sample surface, which was different from the situation in CaF2 single crystal reported before. The possible mechanism of the phenomena was also discussed.The femtosecond laser induced void array inside Al2O3 crystals was discussed. The void array was formed spontaneously under the irradiation of a single beam of infrared femtosecond laser which was focused at a fixed point inside the Al2O3 crystal sample. It was found that the regular voids only could be fabricated near the sample surface, which was different from the situation in CaF2 single crystal reported before. The possible mechanism of the phenomena was also discussed.

分 类 号：TN24[电子电信—物理电子学]