热处理温度对C/C-SiC摩擦材料组织结构的影响  

Effect of Heat-treatment Temperature on Structure of C/C-SiC Braking Composites

作　　者：李专[1] 肖鹏[1] 熊翔[1] 刘建军[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《材料导报》2008年第5期123-125,129,共4页Materials Reports

基　　金：国家863支持计划(2006AA032560);湖南省杰出青年科学基金(06JJ1007)

摘　　要：以短切炭纤维为增强相,采用温压-原位反应法制备C/C-SiC材料,研究了热处理温度对C/C-SiC材料组织结构的影响,以及Si(1)-C原位反应机理。结果表明:试样中硅粉均匀分布于素坯内部,Si-C原位反应只需Si近程扩散即可。Si粉熔化后迅速在就近的炭源表面铺展,并与之反应生成SiC。Si(1)-C反应相对于Si(s)-C反应速度更快,反应更完全。温度越高,生成的SiC也就越多,残留Si相应减少。1500℃热处理后复合材料的SiC含量达到62.7%,残留Si仅为1.4%。C/C-SiC composites, based on reinforcements of carbon fibers and matrices of carbon and silicon carbide, are fabricated by warm compactedqn situ reaction process. The effect of heat-treatment temperature on the structure of C/C-SiC composites and Si（1）-C in situ reaction mechanism are studied. The results indicate that Si powder distributes evenly and Si-C in situ reaction only need Si to diffuse in short range. Liquid Si spreads on the surface of car- bon rapidly and reacts with it forming SiC after Si powder melting. The reaction of Si（1）-C has high rate and is more complete than Si（s）-C. The higher the temperature is, the more SiC is formed, and the residual Si reduces correspondingly. The composite consists of about 62. 7%SiC matrix and 1.4% residual Si after 1500℃ high temperature treatment.

关 键 词：C/C-SIC复合材料 高温热处理 原位反应 Si(1)-C反应机理 

分 类 号：TB331[一般工业技术—材料科学与工程] TH117.3[机械工程—机械设计及理论]