Spin Injection from Ferromagnetic Semiconductor CoZnO into ZnO  

作　　者：Gang JI Shishen YAN Yanxue CHEN Qiang CAO Wei XIA Yihua LIU 

机构地区：[1]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China [2]School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China [3]School of Information Science and Engineering, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

出　　处：《Journal of Materials Science & Technology》2008年第3期415-418,共4页材料科学技术（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China under grant No. 50102019 and 50572053;New Century Fund for Outstanding Scholars （Grant No. 040634）.

摘　　要：2x （FeNi/CoZnO）/ZnO/（CoZnO/Co） x2 spin-inJection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2x（FeNi/CoZnO） and （CoZnO/Co）x2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.2x （FeNi/CoZnO）/ZnO/（CoZnO/Co） x2 spin-inJection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2x（FeNi/CoZnO） and （CoZnO/Co）x2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.

关 键 词：Spin injection MAGNETORESISTANCE Ferromagnetic semiconductor 

分 类 号：TG146.1[一般工业技术—材料科学与工程]