半导体单量子点增益与吸收特性的研究  

Investigation of a single semiconductor quantum dot's absorption and gain properties

作　　者：赵顺才[1] 刘正东(指导)[1] 廖庆洪[1] 

机构地区：[1]南昌大学近代物理研究所,纳米技术工程研究中心,江西南昌330047

出　　处：《量子电子学报》2008年第3期276-281,共6页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(60768001和10464002)

摘　　要：采用密度矩阵的方法进行数值模拟计算紧束缚态的半导体单量子点的增益与吸收行为。其动力学数值结果显示,在某些不同时刻的增益谷和吸收峰的左右分布保持不变对称性,且有上下镜像反转的现象发生;在在长时间演化中发现该量子点系统的增益与吸收发生激烈的振荡而呈现出了量子光学中典型的崩塌与复苏的有趣物理现象。The density matrix approach was employed to investigate analytically the absorption/gain behavior in a semiconductor quantum dot under the strong confinement regime. The numerical results show the distribution symmetry of the gain trough and absorption crest remains the same at some different time, and the phenomena of mirror reflection occurs. However, during the evolution duration the long time absorption/gain behavior of the quantum dot system oscillates furiously and a typical interesting quantum optical phenomena of collapse-revival emergences

关 键 词：量子光学 半导体量子点 增益与吸收 崩塌与复苏现象 

分 类 号：O431.2[机械工程—光学工程]