n型PbTe单体的一体化工艺研究  

Study on integration technology for n-type PbTe elements

作　　者：龙春泉[1] 阎勇[1] 张建中[1] 任保国[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300381

出　　处：《电源技术》2008年第5期299-301,共3页Chinese Journal of Power Sources

摘　　要：概述了一种制备n型PbTe单体的工艺,在制备n型PbTe元件的同时,将电极材料粉末与PbTe粉末一起压制,得到n型PbTe单体,使材料制备和焊接工艺同时完成,达到一体化。对所制备样品的电极、PbTe材料以及之间的过渡层用扫描电子显微镜法(SEM)、电子探针等进行了微观分析,并测试了n型PbTe单体的接触电阻。结果表明:这种方法不仅可以简化工艺,减少n型材料受热冲击次数,还能明显地降低n型PbTe单体的接触电阻。A new technology for integration of n-type PbTe elements was presented. In traditional procedure, the first step is to prepare n-type PbTe materials, then to bond them together with electrodes. The n-type PbTe powder was pressed together with the powder of electrode and buffer materials by powder metallurgy after n-type PbTe alloy was prepared, and the elements were obtained directly. The technical process was described in detail. Some samples of n-type PbTe elements were prepared by using the technology. The electrode, buffer, PbTe material and their interfaces of the prepared samples were characterized by ,SEM and EDX. The contact resistances were measured and compared with the sample prepared by traditional technology. The results indicate that the proposed technology is easy, economic and feasible. It may simplify preparation process of n-type PbTe elements, reduce the times n-type PbTe materials suffered at high temperature and decrease the contact resistance.

关 键 词：PbTe单体 接触电阻 电极 过渡层 

分 类 号：TM913[电气工程—电力电子与电力传动]