等离子体加热脱SiO_2制取ZrO_2的C-N-O图  

C-N-O PHASE EQUILIBRIUM DIAGRAM FOR DESILICATING ZIRCONIA WITH PLASMA HEATING

作　　者：袁章福[1,2] 曾加庆[1,2] 万天骥 潘贻芳[1,2] 

机构地区：[1]北京科技大学 [2]天津钢厂

出　　处：《化工冶金》1997年第4期289-294,共6页

基　　金：国家科委"八五"科技攻关项目

摘　　要：在１５０ｋＷ等离子体装置中，制取脱硅锆（ＺｒＯ２８８６０％～９６９０％）和稳定型氧化锆（ＺｒＯ２９１５４％、ＭｇＯ５３９％），探讨了温度、时间和配碳量等对脱ＳｉＯ２率的影响建立了Ｓｉ－Ｃ－Ｎ－Ｏ系和Ｚｒ－Ｃ－Ｎ－Ｏ系相平衡图，从理论上说明不具备生成Ｓｉ３Ｎ４的热力学条件。Desilicated zirconia (88 6%～96 9% ZrO 2) and the stabilized one (ZrO 2>91 54%,MgO<5 39%) was successfully produced in a 150 kW plasma facility Factors influencing the rate of desilication from zircon such as temperature,time and charged carbon were studied The established phase equilibrium diagrams of Si C N O and Zr C N O systems suggest that thermodynamic condition for production of Si 3N 4 could not be met in theory In limited area of the plasma furnace,the formation of ZrC and ZrN was possible These conclusions were confirmed by test results

关 键 词：等离子体加热 稳定型 氧化锆 脱硅 

分 类 号：TF11[冶金工程—冶金物理化学]