掺杂对铌酸锂晶体非挥发全息存储性能的影响  

Influence of dopants on nonvolatile holographic storage in lithium niobate

作　　者：付博[1] 张国权[1] 刘祥明[1] 申岩[1] 徐庆君[2] 孔勇发[1] 陈绍林[1] 许京军[1] 

机构地区：[1]南开大学弱光非线性光子学教育部重点实验室 [2]枣庄学院物理系,枣庄277160

出　　处：《物理学报》2008年第5期2946-2951,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60678021,10334010);教育部新世纪优秀人才支持计划(批准号:NCET-04-0234);天津市国际科技合作项目(批准号:06YFGHHZ00500);国家重点基础研究发展计划(批准号:2007CB307002,2006CB921703);高等学校学科创新引智计划资助的课题~~

摘　　要：通过研究掺镁、掺锌和掺铟同成分铌酸锂晶体的紫外-红光双色全息存储性能,发现双色记录响应时间均比单色记录时明显缩短,最多的可减小3个数量级;双色记录灵敏度大幅度提高,在掺镁5mol.%的晶体中可达到1.1cm/J.在掺杂浓度超过抗光损伤阈值的铌酸锂晶体中,均可实现非挥发全息存储.但是,在掺镁、锌样品中,深、浅能级中心上的光栅反相,而在掺铟样品中则表现为同相.这是由于掺杂离子的种类不同,在铌酸锂晶体中形成的缺陷中心也不同所引起的.By studying the ultraviolet-red two-color holographic storage performances of Mg-, Zn- and In-doped lithium niobate crystals, we found that the response time of the two-color recording could be shortened by as much as 3 orders of magnitude compared to that of one-color recording, and the two-color recording sensitivity was improved significantly, which was measured to be 1.1 cm/J in the crystal doped with Mg of 5 mol. % . Nonvolatile holographic storage was achieved in the crystals with doping concentrations above the damage-resistant threshold value. However, gratings on the deep centers and the shallow centers were out of phase in Mg- or Zn-doped lithium niobate, while those in In-doped lithium niobate were in phase. We consider that different defects induced by different dopants are responsible for the observed results.

关 键 词：掺杂 铌酸锂晶体 非挥发 全息存储 

分 类 号：TN204[电子电信—物理电子学]