BGSPT_x系高温压电陶瓷的结构及性能  被引量:1

Structure and properties of BGSPT_x system high temperature piezoelectric ceramics

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作  者:赵毅[1] 江一杭[1] 石韦[1] 李丽华[1] 朱建国[1] 

机构地区:[1]四川大学材料科学与工程学院,四川成都610064

出  处:《电子元件与材料》2008年第5期28-31,共4页Electronic Components And Materials

基  金:国家自然科学基金资助项目(No.60471044);国家重点项目资助项目(No.G200514)

摘  要:把BiGaO3作为第三组元引入BiScO3-PbTiO3(BS—PT)体系,用氧化物合成法制备、了0.155BiGaO3-(0.845-x)BiScO3-xPbTiO3(BGSPTx,x为0.54-0.58)压电陶瓷。XRD分析表明,BGSPL具有钙钛矿结构,但同时存在微量的富铋相。三方-四方准同型相界(MPB)位于x为0.56附近。在MPB附近,BGSPTx陶瓷的d33,kp和Pr都达到最大值,分别为180pC/N,30%和18.5×10^-6C/cm^2。εr-t特性曲线测试表明,陶瓷在MPB附近居里温度抽高达494℃。BiGaO3 was introduced into the BiScO3-PbTiO3 (BS-PT) system and formed a new type of ceramics 0.155BiGaO3-(0.845-x)BiScO3-xPbTiO3 (BGSPTx, x = 0.54-0.58). BGSPTx ceramics were fabricated by using conventional mixed metal oxide processing. X-ray diffraction shows that the BGSPTx ceramics have perovskite structure, however, a small amount of the plenty Bi phase is detected. A rhombohedral to tetragonal phase transition (MPB) is determined in the vicinity of x = 0.56. For composition near MPB, BGSPTx ceramics show enhanced piezoelectric coefficient d33, planar coupling coefficient kp and remnant polarization Pr of 180 pC/N, 30%, and 18.5×10^-6 C/cm^2, respectively. The ,εr-t dependence of BGSPTx ceramics are performed, and its tc is 494 ℃ around MPB.

关 键 词:无机非金属材料 居里温度 钙钛矿结构 压电陶瓷 

分 类 号:TM28[一般工业技术—材料科学与工程]

 

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