The effect of configuration complex on dielectronic recombination process in highly ionized plasmas  

作　　者：焦荣珍 冯晨旭 

机构地区：[1]School of Sciences, Beijing University of Posts and Telecommunications

出　　处：《Chinese Physics B》2008年第5期1845-1847,共3页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No 60054402)

摘　　要：This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.

关 键 词：dielectronic recombination AUTOIONIZATION radiative-decay 

分 类 号：O53[理学—等离子体物理]